Dow Chemical Sampling Resin Film

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Midland, Mich., --December 18, 2003-- Dow Chemical Co. today rolled out an advanced version of its porous SiLK low k dielectric film, saying that it has significantly reduced pore size and achieved a k value of 2.2.

Dubbed porous SiLK Y, the dielectric resin is tough enough to withstand conventional back-end-of-line (BEOL) process steps for interconnect fabrication, including chemical mechanical planarization, according to the company. The new material enables continuous deposition of tantalum barriers without subsequent steps for pore sealing; large pores and open pores can degrade barrier performance in a copper interconnect stack, Midland, Mich.-based Dow Chemical said. Large pores and open pores can degrade barrier performance in a copper interconnect stack.

The company is currently sampling the film to key customers and development partners.

Porous SiLK Y has an average pore diameter of less than 2nm and a pore size distribution range between 1nm and 3nm, according to the company. The material's electrical properties and barrier performance are indistinguishable from dense or non-porous SiLK, the company said. The film also demonstrates a surface roughness comparable to non-porous materials, enabling the use of timed-etch integration schemes.

In terms of performance, tantalum barriers deposited on porous SiLK Y have shown up to a 90 percent improvement in sheet resistance and electrical performance compared to all previously reported porous dielectrics, Dow Chemical said. The material also has improved coefficient of thermal expansion (CTE), according to the company; porous SiLK Y resin is more than 50 percent lower than that of its predecessor, SiLK D resin, and more than 150 percent improved relative to earlier versions of SiLK resin and other organic dielectric materials.

Thermal expansion has posed a reliability problem in the integration of organic interlayer dielectric material, as CTE mismatches between it and the barrier deposited upon it can lead to problems during thermal cycling, including metal interconnect damage.

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